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Bonding configuration and defects in amorphous SiN[sub x]:H films.

Authors :
Hasegawa, S.
Matsuda, M.
Kurata, Y.
Source :
Applied Physics Letters. 2/18/1991, Vol. 58 Issue 7, p741. 3p. 1 Chart, 4 Graphs.
Publication Year :
1991

Abstract

Investigates the bonding configuration and defects in amorphous SiN[sub x]:H films. Maximum of the slope in the Urbach form of the absorption coefficient; Examination of the random-bonding model including hydrogen atoms.

Details

Language :
English
ISSN :
00036951
Volume :
58
Issue :
7
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4330519
Full Text :
https://doi.org/10.1063/1.104533