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Effects of ion beam defect engineering on carrier concentration profiles in 50 keV....
- Source :
-
Applied Physics Letters . 6/14/1993, Vol. 62 Issue 24, p3183. 3p. 4 Graphs. - Publication Year :
- 1993
-
Abstract
- Examines the effects of ion beam defect engineering on carrier concentration profiles in phosphorus ion-implanted silicon(100). Role of point defects in the diffusion process; Formation of an amorphous layer by Si ion irradiation; Use of proximity gathering in leakage current reduction.
- Subjects :
- *POINT defects
*SILICON
*ION implantation
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 62
- Issue :
- 24
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4329769
- Full Text :
- https://doi.org/10.1063/1.109123