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Subpicosecond hot hole dynamics in highly excited GaAs.

Authors :
Gong, T.
Fauchet, P.M.
Young, J.F.
Kelly, P.J.
Source :
Applied Physics Letters. 2/1/1993, Vol. 62 Issue 5, p522. 3p. 4 Graphs.
Publication Year :
1993

Abstract

Examines the hot hole dynamics on a subpicosecond time scale in highly excited intrinsic gallium arsenide. Use of a kinetic model to determine hole temperature behavior; Effect of phonon emission process on the data consistency; Importance of electron-hole and hole-lattice interactions.

Subjects

Subjects :
*HOLES (Electron deficiencies)
*GALLIUM arsenide

Details

Language :
English
ISSN :
00036951
Volume :
62
Issue :
5
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4329539
Full Text :
https://doi.org/10.1063/1.108899
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