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Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed Si1-퓍 Ge퓍 Source/Drain Junctions.
- Source :
-
IEEE Transactions on Electron Devices . Jul2009, Vol. 56 Issue 7, p1418-1423. 6p. 1 Black and White Photograph, 1 Diagram, 7 Graphs. - Publication Year :
- 2009
-
Abstract
- The purpose of this paper is to evaluate the impact of process-induced stress on the generation current of fully strained Si1-x Gex source/drain junctions. The Ge content of the compressively strained SiGe epitaxial layer plays a key role the tensile stress levels present in the underlying Si substrate. Current-voltage (I-V) measurements were employed to further investigate the leakage current enhancement due to the stress-induced bandgap narrowing in the Si depletion region, when extended defects are formed. An empirical approach is proposed to describe the Ge content dependence of the bandgap-shrinkage-induced leakage current. An increase of the intrinsic carrier concentration as a function of the stress mismatch is observed. Moreover, the role of the epilayer thickness in the generation current is also discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 43082624
- Full Text :
- https://doi.org/10.1109/TED.2009.2021343