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A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy.
- Source :
-
Applied Physics Letters . 8/2/1999, Vol. 75 Issue 5, p683. 3p. 1 Black and White Photograph, 2 Diagrams, 1 Graph. - Publication Year :
- 1999
-
Abstract
- Discusses the generation of a phosphorous-rich structure on the indium phosphide surface during metalorganic vapor-phase epitaxy. Adsorption of phosphorous dimers, alkyl groups and hydrogen atoms onto a layer of P atoms; Production of c and p domains of the adsorbed dimers.
- Subjects :
- *INDIUM phosphide
*ORGANOMETALLIC compounds
*EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 75
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4296087
- Full Text :
- https://doi.org/10.1063/1.124481