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Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition.
- Source :
-
Applied Physics Letters . 1/18/1999, Vol. 74 Issue 3, p383. 3p. 5 Black and White Photographs, 3 Graphs. - Publication Year :
- 1999
-
Abstract
- Reports on the successful growing of nanometer-scale indium gallium nitride (InGaN) self-assembled quantum dots (QD) on GaN surface without any surfactant, using atmospheric-pressure metalorganic chemical vapor deposition. Average diameter of the InGaN QD; Dependence of QD properties on growth conditions; Emission seen at 2.86 eV at room temperature.
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 74
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4295901
- Full Text :
- https://doi.org/10.1063/1.123078