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Investigation of higher order bands in irradiated Czochralski silicon.

Authors :
Shi, Y.
Zheng, Y.D.
Suezawa, M.
Imai, M.
Sumino, K.
Source :
Applied Physics Letters. 3/7/1994, Vol. 64 Issue 10, p1227. 3p. 6 Graphs.
Publication Year :
1994

Abstract

Investigates the higher order bands (HOB) in irradiated Czochralski silicon. Use of Fourier transform infrared absorption spectroscopy and Hall-effect measurements; Factors attributing to the creation of higher order bands; Photoexcitation and decay characteristics of HOB and the thermal donors.

Subjects

Subjects :
*CONDUCTION bands
*SILICON

Details

Language :
English
ISSN :
00036951
Volume :
64
Issue :
10
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4294243
Full Text :
https://doi.org/10.1063/1.110847