Improvements in strain-balanced InGaAs/GaAs optical modulators for 1047-nm operation.

Authors :: Goodwill, D.J.
Walker, A.C.
Stanley, C.R.
Holland, M.C.
McElhinney, M.
Source :: Applied Physics Letters. 3/7/1994, Vol. 64 Issue 10, p1192. 3p. 5 Graphs.
Publication Year :: 1994
Abstract: Presents improvements in strain-balanced indium gallium arsenide/gallium arsenide electro-optic effect device modulators. Absorption peak of the device; Use of the indium gallium arsenide/gallium arsenide multiple quantum well; Application of a 13-V reverse bias to obtain a single pass modulation contrast ratio.

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