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Defect and strain redistribution in In[sub x]Ga[sub 1-x]As/GaAs multiple quantum wells studied....
- Source :
-
Applied Physics Letters . 9/27/1993, Vol. 63 Issue 13, p1842. 3p. 5 Graphs. - Publication Year :
- 1993
-
Abstract
- Examines defect and strain redistribution in In[sub x]Ga[sub 1-x]As/gallium arsenide multiple quantum wells. Use of resonant Raman scattering by longitudinal optical phonons; Sensitivity of scattering intensity; Detection of the onset of the strain redistribution.
- Subjects :
- *QUANTUM wells
*STRAINS & stresses (Mechanics)
*RAMAN effect
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 63
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4294099
- Full Text :
- https://doi.org/10.1063/1.110680