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Scanning tunneling microscopy investigations of the Si(111) topography produced by etching in....
- Source :
-
Applied Physics Letters . 8/23/1993, Vol. 63 Issue 8, p1119. 3p. 3 Black and White Photographs, 1 Diagram, 1 Graph. - Publication Year :
- 1993
-
Abstract
- Investigates the time evolution of the topography of an oxidized silicon (Si) surface immersed in an aqueous 40% NH[sub 4]F etching solution. Use of scanning tunneling microscopy; Production of Si pillars at shielded surface locations; Suppression of gas evolution and roughening by reductant addition.
- Subjects :
- *SILICON
*SURFACES (Physics)
*SEMICONDUCTOR etching
*SCANNING tunneling microscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 63
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4294040
- Full Text :
- https://doi.org/10.1063/1.109799