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Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum....

Authors :
Zhang, Y.
Baruch, N.
Wang, W.I.
Source :
Applied Physics Letters. 8/23/1993, Vol. 63 Issue 8, p1068. 3p. 1 Diagram, 4 Graphs.
Publication Year :
1993

Abstract

Describes the normal incidence infrared (IR) photodetectors using intersubband transitions in gallium antimonide L-valley quantum wells. Achievement of a strong IR absorption and good photodetector response; Presentation of the orientation dependence of the absorption; Influence of the electric field induced Stark shift on the responsivity peak.

Details

Language :
English
ISSN :
00036951
Volume :
63
Issue :
8
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4294021
Full Text :
https://doi.org/10.1063/1.109835