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Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron...
- Source :
-
Applied Physics Letters . 4/19/1999, Vol. 74 Issue 16, p2289. 3p. 2 Diagrams, 4 Graphs. - Publication Year :
- 1999
-
Abstract
- Investigates the change of the Fermi energy level at the interface of Pd/p-type GaN by surface treatment using positron annihilation spectroscopy. Interpretation of the electrical properties of the contact; Changes in the positron parameters at the interface in the aqua regia-treated GaN.
- Subjects :
- *FERMI surfaces
*POSITRON annihilation
*SPECTRUM analysis
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 74
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4290803
- Full Text :
- https://doi.org/10.1063/1.123827