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Ultraviolet ozone induced oxidation of epitaxial Si[sub 1-x]Ge[sub x](111).

Authors :
Agarwal, A.
Patterson, J.K.
Greene, J.E.
Rockett, A.
Source :
Applied Physics Letters. 7/26/1993, Vol. 63 Issue 4, p518. 3p. 5 Graphs.
Publication Year :
1993

Abstract

Examines the room temperature utraviolet/ozone-induced oxidation of epitaxial silicon[sub 1-x]germanium[sub x](111) alloy. Use of x-ray photoelectron spectroscopy; Components of the two-phased oxide formed; Segregation of germanium layer at alloy/oxide interface; Dependence of oxidation rate on germanium content.

Subjects

Subjects :
*OXIDATION
*ALLOYS
*INTERFACES (Physical sciences)
*GERMANIUM

Details

Language :
English
ISSN :
00036951
Volume :
63
Issue :
4
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4289458
Full Text :
https://doi.org/10.1063/1.109991
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