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Density and structural changes in SiC after amorphization and annealing.
- Source :
-
Applied Physics Letters . 6/30/1997, Vol. 70 Issue 26, p3531. 3p. 4 Graphs. - Publication Year :
- 1997
-
Abstract
- Measures the density of amorphous silicon carbide layers by x-ray reflectometry. Comparison to the results of step height measurements; Investigation of density as function of depth using reactive ion etching; Homogeneity of the density reduction across the whole layer thickness.
- Subjects :
- *AMORPHOUS semiconductors
*SILICON carbide
*REFLECTOMETER
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 70
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4272656
- Full Text :
- https://doi.org/10.1063/1.119223