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Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W).

Authors :
Ono, H.
Nakano, T.
Source :
Applied Physics Letters. 3/21/1994, Vol. 64 Issue 12, p1511. 3p. 1 Chart, 4 Graphs.
Publication Year :
1994

Abstract

Investigates the diffusion of copper (Cu) into silicon (Si) through various barrier metals to find diffusion barrier materials for copper. Measurement of copper behavior in Cu/M/Si multilayers; Preservation of the multilayer structures of the Cu/Ta/Si and Cu/W/Si multilayers after annealing; Difference in the barrier properties of the transition metals.

Details

Language :
English
ISSN :
00036951
Volume :
64
Issue :
12
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4272424
Full Text :
https://doi.org/10.1063/1.111875