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Observation of Ga vacancies in silicon delta-doping superlattices in (001) GaAs.
- Source :
-
Applied Physics Letters . 9/29/1997, Vol. 71 Issue 13, p1843. 3p. 2 Graphs. - Publication Year :
- 1997
-
Abstract
- Investigates compensating defects in silicon delta-doping superlattices in (001) gallium arsenide. Performance of positron annihilation experiments; Location of the defects; Identification of the defect as the gallium vacancy; Effect of the reduction of the areal concentrations of the free carriers.
- Subjects :
- *DOPED semiconductor superlattices
*GALLIUM arsenide
*POSITRON annihilation
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 71
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4255284
- Full Text :
- https://doi.org/10.1063/1.119417