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III-V based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlattices.
- Source :
-
Applied Physics Letters . 9/29/1997, Vol. 71 Issue 13, p1825. 3p. 2 Black and White Photographs, 5 Graphs. - Publication Year :
- 1997
-
Abstract
- Investigates the growth of III-V based magnetic(gallium manganese arsenide)/nonmagnetic(aluminum arsenide) semiconductor superlattices (SL) by low-temperature molecular beam epitaxy. Characterization of the SL; Evidence of quantum confinement effect; Formation of the subbands in the SL.
- Subjects :
- *SUPERLATTICES
*MOLECULAR beam epitaxy
*LOW temperatures
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 71
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4255278
- Full Text :
- https://doi.org/10.1063/1.119411