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Mechanism for Si island retention in buried SiO[sub 2] layers formed by oxygen ion implantation.
- Source :
-
Applied Physics Letters . 10/13/1997, Vol. 71 Issue 15, p2106. 3p. 3 Black and White Photographs, 1 Diagram, 5 Graphs. - Publication Year :
- 1997
-
Abstract
- Investigates the density of silicon (Si) islands trapped in buried silicon dioxide layers. Implantation of oxygen into (001)Si substrates; Presence of phase remnants with reduced harmonic frequency etch rate; Result of the enhanced internal pressure inside the Si crystal.
- Subjects :
- *SILICA
*ION implantation
*OXYGEN
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 71
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4221820