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Spectroscopic ellipsometry of epitaxial Si {100} surfaces.

Authors :
Nayar, V.
Leong, W.Y.
Source :
Applied Physics Letters. 9/14/1992, Vol. 61 Issue 11, p1304. 3p. 2 Graphs.
Publication Year :
1992

Abstract

Examines epitaxial silicon orientations by ex situ spectroscopic ellipsometry. Analysis of the peak values of the real and imaginary parts of the dielectric function; Impact of the surface features with lateral scales on the dielectric spectra; Implication of the high dielectric function peaks for nanometer lateral-scale roughness.

Subjects

Subjects :
*EPITAXY
*SILICON
*ELLIPSOMETRY
DIELECTRICS spectra

Details

Language :
English
ISSN :
00036951
Volume :
61
Issue :
11
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4217943
Full Text :
https://doi.org/10.1063/1.107573
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