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Molecular-beam epitaxial regrwoth on oxygen-implanted GaAs substrates for device integration.
- Source :
-
Applied Physics Letters . 6/28/1999, Vol. 74 Issue 26, p4058. 3p. 1 Diagram, 4 Graphs. - Publication Year :
- 1999
-
Abstract
- Describes molecular-beam epitaxial regrowth on oxygen-implanted GaAs substrates for device integration. Device-quality GaAs created by the regrowth; Cutoff frequency of a metal-semiconductor field-effect transistor fabricated on the regrown layer.
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 74
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4211759
- Full Text :
- https://doi.org/10.1063/1.123260