Type II recombination and band offset determination in a tensile strained InGaAs quantum well.

Examines photoluminescence (PL) measurements of tensile strained In[sub 0.3]Ga[sub 0.7]As/In[sub 0.53]Ga[sub 0.7]As quantum well. Absence of intensity saturation for laser excitation in PL intensity; Decrease in PL lifetime for type I quantum well; Determination of the light holes band offset in the In[sub x]Ga[sub 1-x]As/In[sub y]Ga[sub 1-y]As quantum well.