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Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides.

Authors :
Okada, Kenji
Taniguchi, Kenji
Source :
Applied Physics Letters. 1/20/1997, Vol. 70 Issue 3, p351. 3p. 5 Graphs.
Publication Year :
1997

Abstract

Investigates the electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides. Proposal of a model for the conduction mechanism of the B-mode stress-induced leakage current (B-SILC); Function of B-SILC; Discussion on the empirical expression for the current-voltage characteristics of the B-SILC.

Subjects

Subjects :
*HOPPING conduction
*SILICA

Details

Language :
English
ISSN :
00036951
Volume :
70
Issue :
3
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4187116
Full Text :
https://doi.org/10.1063/1.118411