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Tightly confined one-dimensional states in T-shaped GaAs edge quantum wires with AlAs barriers.
- Source :
-
Applied Physics Letters . 6/26/1995, Vol. 66 Issue 26, p3672. 2p. 1 Diagram, 1 Graph. - Publication Year :
- 1995
-
Abstract
- Describes the preparation of T-shaped gallium arsenide quantum wire (T-QWR) structure with aluminum arsenide barriers using the cleaved edge growth method. Observation of three photoluminescence (PL) peaks; Determination of the T-QWR binding energy; Comparison between the effective binding energy and thermal energy.
- Subjects :
- *NANOWIRES
*ARSENIDES
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 66
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4186985
- Full Text :
- https://doi.org/10.1063/1.114136