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Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates.

Authors :
Egawa, T.
Hasegawa, Y.
Source :
Applied Physics Letters. 11/13/1995, Vol. 67 Issue 20, p2995. 3p. 3 Color Photographs, 3 Graphs.
Publication Year :
1995

Abstract

Examines the degradation of the AlGaAs/GaAs well laser diodes on silicon substrates grown by metalorganic chemical vapor deposition. Cause of increase in threshold current and decrease in differential quantum efficiency; Effect of the defect-assisted impurity diffusion; Reason for the rapid occurrence in degradation process.

Details

Language :
English
ISSN :
00036951
Volume :
67
Issue :
20
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4177837
Full Text :
https://doi.org/10.1063/1.114930