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Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates.
- Source :
-
Applied Physics Letters . 11/13/1995, Vol. 67 Issue 20, p2995. 3p. 3 Color Photographs, 3 Graphs. - Publication Year :
- 1995
-
Abstract
- Examines the degradation of the AlGaAs/GaAs well laser diodes on silicon substrates grown by metalorganic chemical vapor deposition. Cause of increase in threshold current and decrease in differential quantum efficiency; Effect of the defect-assisted impurity diffusion; Reason for the rapid occurrence in degradation process.
- Subjects :
- *LIGHT emitting diodes
*QUANTUM wells
*CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 67
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4177837
- Full Text :
- https://doi.org/10.1063/1.114930