Back to Search
Start Over
Importance of channeled implantation to the synthesis of erbium silicide layers.
- Source :
-
Applied Physics Letters . 12/25/1995, Vol. 67 Issue 26, p3886. 3p. 1 Chart, 3 Graphs. - Publication Year :
- 1995
-
Abstract
- Examines the significance of channeled implantation in the synthesis of erbium silicide layers. Range of temperatures and energy used in the deposition; Formation of good crystalline quality of the continuous epitaxial erbium silicide layer; Energy level of ion beam synthesis.
- Subjects :
- *ION implantation
*SILICIDES
*LAYER structure (Solids)
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 67
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4177251
- Full Text :
- https://doi.org/10.1063/1.115306