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A comparison of hot-carrier degradation in tungsten...
- Source :
-
IEEE Transactions on Electron Devices . Apr98, Vol. 45 Issue 4, p895. 9p. 1 Diagram, 1 Chart, 14 Graphs. - Publication Year :
- 1998
-
Abstract
- Compares the hot-carrier degradation behavior for polycided gate and non-polycided gate p-metal-oxide semiconductor field-effect transistors (MOSFET). Experimental procedure; Gate-to-drain capacitance of MOSFET; Results and discussion of the experiment; Conclusions.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 45
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 416872
- Full Text :
- https://doi.org/10.1109/16.662798