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Complete recrystallization of amorphous silicon carbide layers by ion irradiation.
- Source :
-
Applied Physics Letters . 10/2/1995, Vol. 67 Issue 14, p1999. 3p. 6 Black and White Photographs, 1 Graph. - Publication Year :
- 1995
-
Abstract
- Investigates the ion-beam-induced recrystallization of amorphous surface layers on single-crystalline silicon carbide substrates. Use of transmission electron microscopy, Rutherford backsetting spectroscopy and channeling; Efficiency of irradiation to reduce the temperature of epitaxial layer regrowth; Nucleation of recrystalline materials.
- Subjects :
- *RECRYSTALLIZATION (Metallurgy)
*AMORPHOUS semiconductors
*SILICON carbide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 67
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4167993
- Full Text :
- https://doi.org/10.1063/1.114766