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Incorporation kinetics of rare-earth metals in Si during molecular beam epitaxy.
- Source :
-
Applied Physics Letters . 7/10/1995, Vol. 67 Issue 2, p235. 3p. 5 Graphs. - Publication Year :
- 1995
-
Abstract
- Investigates the incorporation kinetics of rare earth metals in silicon during molecular beam epitaxy (MBE). Application of ion mass spectrometry; Surface segregation on rare earth metals in normal MBE growth; Implication of segregant-assisted growth using antimony for surface segregation reduction.
- Subjects :
- *RARE earth metals
*SILICON
*MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 67
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4167913
- Full Text :
- https://doi.org/10.1063/1.114678