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Improvement of SiO[sub 2]/Si interface by low-temperature annealing in wet atmosphere.
- Source :
-
Applied Physics Letters . 4/17/1995, Vol. 66 Issue 16, p2107. 3p. 3 Graphs. - Publication Year :
- 1995
-
Abstract
- Examines the role of low temperature annealing in improving silicon dioxide/silicon interface. Use of infrared absorption spectroscopy in assessing chemical bonding in silicon dioxide films; Rate of deposition of silicone dioxide films; Concentration of water and hydroxide group in the silicon dioxide films.
- Subjects :
- *ANNEALING of metals
*SILICA
*THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 66
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4167741
- Full Text :
- https://doi.org/10.1063/1.113918