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Detection of oxygen incorporated in molecular-beam epitaxy grown GaAs-on-AlAs interfaces and....
- Source :
-
Applied Physics Letters . 10/4/1993, Vol. 63 Issue 14, p1924. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 1993
-
Abstract
- Determines the concentration of oxygen incorporated in GaAs/AlAs (gallium arsenide) interfaces and AlAs layers by secondary ion mass spectrometry (SIMS). Importance of minimizing the impurity incorporation from residual gas species in molecular-beam epitaxy; Details on the number of oxygen atoms adsorbed on the AlAs surfaces during growth interruption; Advantages of SIMS.
- Subjects :
- *OXYGEN
*GALLIUM arsenide
*SECONDARY ion mass spectrometry
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 63
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4164252
- Full Text :
- https://doi.org/10.1063/1.110650