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Evolution of Holed Nanostructures on GaAs (001).
- Source :
-
Crystal Growth & Design . Jun2009, Vol. 9 Issue 6, p2941-2943. 3p. - Publication Year :
- 2009
-
Abstract
- We studied the evolution of holed nanostructures by gallium droplet epitaxy on a GaAs surface. A linear relationship between the height and diameter of outer rings from holed nanostructures was found. Further, an empirical rule to predict the ratio of height to outer ring diameter for Ga and In holed nanostructures was established. This rule provides deeper insights to quantum rings formation from droplet materials. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15287483
- Volume :
- 9
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Crystal Growth & Design
- Publication Type :
- Academic Journal
- Accession number :
- 41427314
- Full Text :
- https://doi.org/10.1021/cg900189t