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Evolution of Holed Nanostructures on GaAs (001).

Authors :
Alvason Zhenhua Li
Zhiming M. Wang
Jiang Wu
Yanze Xie
Kim A. Sablon
Gregory J. Salamo
Source :
Crystal Growth & Design. Jun2009, Vol. 9 Issue 6, p2941-2943. 3p.
Publication Year :
2009

Abstract

We studied the evolution of holed nanostructures by gallium droplet epitaxy on a GaAs surface. A linear relationship between the height and diameter of outer rings from holed nanostructures was found. Further, an empirical rule to predict the ratio of height to outer ring diameter for Ga and In holed nanostructures was established. This rule provides deeper insights to quantum rings formation from droplet materials. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15287483
Volume :
9
Issue :
6
Database :
Academic Search Index
Journal :
Crystal Growth & Design
Publication Type :
Academic Journal
Accession number :
41427314
Full Text :
https://doi.org/10.1021/cg900189t