Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates.

MLA

Baeck, J. H., et al. “Electronic and Structural Characteristics of Zr-Incorporated Gd2O3 Films on Strained SiGe Substrates.” Journal of Chemical Physics, vol. 130, no. 20, May 2009, p. 204510. EBSCOhost, https://doi.org/10.1063/1.3140203.

APA

Baeck, J. H., Park, S. A., Lee, W. J., Jeong, I. S., Jeong, K., Cho, M.-H., Kim, Y. K., Min, B. G., & Ko, D. H. (2009). Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates. Journal of Chemical Physics, 130(20), 204510. https://doi.org/10.1063/1.3140203

Chicago

Baeck, J. H., S. A. Park, W. J. Lee, I. S. Jeong, K. Jeong, M.-H. Cho, Y. K. Kim, B. G. Min, and D. H. Ko. 2009. “Electronic and Structural Characteristics of Zr-Incorporated Gd2O3 Films on Strained SiGe Substrates.” Journal of Chemical Physics 130 (20): 204510. doi:10.1063/1.3140203.