Relaxation and recovery processes of Al x Ga1− x N grown on AlN underlying layer

Abstract: The processes as in title of relaxation of the lattice mismatch and the recovery of crystalline quality in thick Al x Ga1− x N on high-temperature-grown AlN were investigated. When x=0.3, rapid lattice relaxation occurred over a few microns, then the crystalline quality gradually recovered over 10μm. In contrast, when x=0.7, relaxation of the lattice mismatch gradually occurred over 5μm. [Copyright &y& Elsevier]