Back to Search
Start Over
Another route to fabricate single-phase chalcogenides by post-selenization of Cu–In–Ga precursors sputter deposited from a single ternary target
- Source :
-
Solar Energy Materials & Solar Cells . Aug2009, Vol. 93 Issue 8, p1351-1355. 5p. - Publication Year :
- 2009
-
Abstract
- Abstract: Single-layered precursors comprising In and Cu11(In,Ga)9 were fabricated by one-step sputtering of a Cu–In–Ga ternary target, subsequently covered by an evaporated Se layer as the source of post-selenization, involving low-temperature (100°C) homogenization and high-temperature (⩾450°C) chalcogenization treatments. Initially it appears that the post-selenization process is inappropriate to fabricate device-quality CIGS absorber layers because the composite precursor is converted into (In,Ga)2Se3 and Cu3Se2 with segregated phases and roughened topography. However, adequately controlling the processing steps leads to a fully microstructure-homogenized precursor, offering a new route and chemical reaction process to fabricate Cu(In,Ga)Se (CIGS) absorber layer with sounding crystallinity. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 09270248
- Volume :
- 93
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Solar Energy Materials & Solar Cells
- Publication Type :
- Academic Journal
- Accession number :
- 40633842
- Full Text :
- https://doi.org/10.1016/j.solmat.2009.02.014