Effect of processing on microstructure of Si:Mn

Abstract: Effect of processing of Si:Mn at up to 1270K (HT) under enhanced hydrostatic pressure (HP, up to 1.1GPa) for 1h on its microstructure has been investigated by X-ray and SIMS methods. Si:Mn was prepared by implantation at 610K of Mn+ ions (dose 1×1016 cm−2, energy 160keV) into (001) oriented Czochralski (Cz-Si) or Floating zone (Fz-Si) silicon with interstitial oxygen concentration, c o =1.5×1017 cm−3 (Fz-Si) or 9×1017 cm−3 (Cz-Si). The defect structure of Si:Mn depends on c o, HT and HP. The intensity of X-ray diffraction peaks originating from the ferromagnetic Mn4Si7 phase (with the lattice parameters a =0.5525nm and c =1.7463nm) increases with HT, up to 1070K. Markedly shifted Mn atom concentration towards the surface is observed after processing of Si:Mn at ≥1000K, especially under 105 Pa. Processing at 1270K results in the decreased content of Mn4Si7; Mn diffusivity decreases with HP. Oxygen gettering within the implantation-disturbed area has been stated. [Copyright &y& Elsevier]