Suppression of 1/f Noise in Accumulation Mode FD-SOI MOSFETs on Si(100) and (110) Surfaces.

In this paper, a new approach to reduce the 1/f noise levels in the MOSFETs on varied silicon orientations, such as Si(100) and (110) surfaces, has been carried out. We focus on the Accumulation-mode (AM) FD-SOI device structure and demonstrate that the 1/f noise levels in this AM FD-SOI MOSFETs are obviously reduced on both the Si(100) and (110) surfaces. [ABSTRACT FROM AUTHOR]