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Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy
- Source :
-
Journal of Crystal Growth . Mar2009, Vol. 311 Issue 7, p1662-1665. 4p. - Publication Year :
- 2009
-
Abstract
- Abstract: The optical absorption of GaAsN films grown by molecular beam epitaxy on GaAs substrates is measured using the mirage effect photothermal deflection spectroscopy (PDS). The PDS spectra were fitted with a modified Fernelius model, which takes into account multiple reflections within the GaAsN layer and GaAs substrate. This allowed the extraction of bandedge parameters for a series of GaAsN films with N content varying from 0.24% to 1.4% N. All films show a clear Urbach absorption edge with a composition-dependent bandgap consistent with literature and Urbach slope parameters roughly 3 times larger than GaAs values. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 311
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 37350590
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2008.11.068