Growth and structure of epitaxial Pb1 − xMn xSe(Ga) films.

The growth and structure of Pb1 − xMn xSe (Ga) (NGa = 0.8 at %) films with thicknesses of 0.3–0.5 μm, grown on single-crystal PbSe1 − xS x (100) substrates by molecular-beam epitaxy, have been studied. It is established that films grow in a face-centered cubic lattice with the (100) orientation, reproducing the substrate orientation. The optimal conditions for obtaining photosensitive epitaxial films with perfect crystal structure are determined ( W1/2 = 70–80″). [ABSTRACT FROM AUTHOR]