Cite
Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride.
MLA
Sennikov, P. G., et al. “Production of Nanocrystalline Silicon Layers Using the Plasma Enhanced Chemical Vapor Deposition from the Gas Phase of Silicon Tetrafluoride.” JETP Letters, vol. 89, no. 2, Mar. 2009, pp. 73–75. EBSCOhost, https://doi.org/10.1134/S0021364009020052.
APA
Sennikov, P. G., Golubev, S. V., Shashkin, V. I., Pryakhin, D. A., Drozdov, M. N., Andreev, B. A., Drozdov, Y. N., Kuznetsov, A. S., & Pohl, H.-J. (2009). Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride. JETP Letters, 89(2), 73–75. https://doi.org/10.1134/S0021364009020052
Chicago
Sennikov, P. G., S. V. Golubev, V. I. Shashkin, D. A. Pryakhin, M. N. Drozdov, B. A. Andreev, Yu. N. Drozdov, A. S. Kuznetsov, and H. -J. Pohl. 2009. “Production of Nanocrystalline Silicon Layers Using the Plasma Enhanced Chemical Vapor Deposition from the Gas Phase of Silicon Tetrafluoride.” JETP Letters 89 (2): 73–75. doi:10.1134/S0021364009020052.