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Modeling of Direct Tunneling Current Through Gate Dielectric Stacks.
- Source :
-
IEEE Transactions on Electron Devices . Oct2000, Vol. 47 Issue 10, p1851. 7p. 4 Black and White Photographs, 1 Diagram, 6 Graphs. - Publication Year :
- 2000
-
Abstract
- Investigates the modeling of direct tunneling current through gate dielectric stacks. Gate lengths of complementary metal oxide semiconductors; Assumptions and approximations made in the investigation; Discussion of tunneling currents.
- Subjects :
- *DIELECTRICS
*COMPLEMENTARY metal oxide semiconductors
*ELECTRIC currents
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 3683564
- Full Text :
- https://doi.org/10.1109/16.870561