GROUND STATE ENERGY OF A GaAs- Ga1-xAlxAs PILLBOX IMMERSED IN A SYSTEM OF Ga1-yAlyAs UNDER APPLIED HYDROSTATIC PRESSURE.

In this work we studied the behavior of the energy level of the ground state for both electrons and holes in a GaAs- Ga1-xAlxAs pillbox immersed in a system of Ga1-yAlyAs as a function of an applied hydrostatic pressure. We have found that the electron - light hole transition energy present an excellent agreement with experimental reports by Venkateswaran et al, PRB 33, 8416 (1986). [ABSTRACT FROM AUTHOR]