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Growth and optical properties of Lu3(Ga,Al)5O12 single crystals for scintillator application
- Source :
-
Journal of Crystal Growth . Jan2009, Vol. 311 Issue 3, p908-911. 4p. - Publication Year :
- 2009
-
Abstract
- Abstract: Effect of Ga substitution in a (Ce,Lu)3Al5O12 scintillator was examined at the crystals grown by the micro-pulling down(μ-PD) method. Strong suppression of unwanted host luminescence due to an exciton localized around Lu–Al antisite defect was observed even at the Ga concentration of 10mol%. Less-intense slower components in scintillation decay were obtained upon increasing the amount of Ga. While the radioluminescence intensities of the 5d–4f luminescence of Ce3+ were not strongly changed, light yield was increased by Ga substitution. The 20% Ga-substituted sample showed even higher light yield than typical Czochralski-grown Ga-free LuAG:Ce. [Copyright &y& Elsevier]
- Subjects :
- *CRYSTAL growth
*OPTICAL properties
*OXIDES
*GALLIUM
*SCINTILLATORS
*LUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 311
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 36540596
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2008.09.146