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Micromachined V-band CMOS bandpass filter with 2 dB insertion loss.
- Source :
-
Electronics Letters (Institution of Engineering & Technology) . 1/15/2009, Vol. 45 Issue 2, p100-102. 3p. 1 Diagram, 1 Chart, 1 Graph. - Publication Year :
- 2009
-
Abstract
- A low-insertion-loss V-band CMOS bandpass filter is demonstrated. The proposed filter architecture has the following features: the low-frequency transmission-zero (ωz1) and the high-frequency transmission-zero (ωz2) can be tuned by the series-feedback capacitor Cs and the parallel-feedback capacitor Cp, respectively. To reduce the substrate loss, the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filter. After the ICP etching, this filter achieved insertion loss (1/S21) lower than 3 dB over the frequency range 52.5–76.8 GHz. The minimum insertion loss was 2 dB at 63.5 GHz, the best results reported for a V-band CMOS bandpass filter in the literature. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 45
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 36078298
- Full Text :
- https://doi.org/10.1049/el:20092862