Pseudo 2-Transistor Active Pixel Sensor Using an N-well/Gate-Tied P-Channel Metal Oxide Semiconductor Field Eeffect Transistor-Type Photodetector with Built-in Transfer Gate.

The article presents a study on designing and fabricating of pseudo 2-transistor active pixel sensor (APS) using a 0.35 µm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. It says that pseudo 2-transistor APS is composed of two p-channel metal oxide semiconductor field effect transistor (PMOSFET) and one photo-detector. It presents layouts of photo-detector and active pixel and shows the control signals and layouts of conventional 3-transistor APS.