Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

The implantation profile of boron in silicon annealed at 600°C for 1h as given by laser-assisted wide-angle atom probe was found to be in good agreement with secondary ion mass spectrometry data. Numerous boron clusters in the form of tiny platelets (3–6nm diameter, 2nm thick) were identified and interpreted as boron interstitial clusters (BICs). These BICs contained on average 7at.% B with a core level that reaches 10at.%. [Copyright &y& Elsevier]