Analytical solution for charge-carrier injection into an insulating layer in the drift diffusion approximation.

Using a drift-diffusion approximation, we obtain an analytical solution to the problem of charge-carrier injection into an insulating i layer of finite thickness with account of self-consistent boundary conditions. The main assumption is that the self-doping of the i layer is neglected. The solution makes it possible to calculate the potential, electric field, and current-voltage characteristics of a variety of structures such as metal-i layer-n+ (or p+) semiconductor, metal-i layer-metal, and n+(p+)-i-n+(p+) structures. The solution admits a generalization for structures having heterobarriers at the interface of the semiconductor layers. The proposed approach allows for the contact phenomena and bulk effects related to that the current is space charge-limited in the i layer. The solution is valid for both the limiting cases and the transient regimes. [ABSTRACT FROM AUTHOR]