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Silicon-induced faceting of vicinal GaAs(001).
- Source :
-
Journal of Applied Physics . 9/15/2000, Vol. 88 Issue 6, p3367. 10p. 1 Diagram, 1 Chart, 12 Graphs. - Publication Year :
- 2000
-
Abstract
- Presents in situ x-ray diffraction studies of the evolution of the morphology of vicinal GaAs surfaces during and following undoped and silicon-doped growth using organometallic vapor-phase epitaxy. Undoped GaAs growth; Silicon-doped GaAs growth.
- Subjects :
- *SURFACES (Physics)
*SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 88
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 3570726
- Full Text :
- https://doi.org/10.1063/1.1289482