Control of p-type conduction in a-plane Ga1− x In x N (0<x<0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy

Abstract: We investigated the electrical properties of Mg-doped a-plane Ga1− x In x N (0<x<0.10) films grown on low-dislocation-density-undoped GaN templates on +0.5°-off r-plane sapphire substrates by metalorganic vapor-phase epitaxy. The maximum hole concentration of 8.3×1018 cm−3 for x=0.10 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a-plane Ga0.90In0.10N was as low as 50meV. [Copyright &y& Elsevier]