Control of stress and crystalline quality in GaInN films used for green emitters

Abstract: We succeeded in growing almost completely relaxed, high-quality, thick GaInN films on an m-plane GaN template with grooves along the 〈0001〉 direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GaInN film with a threading dislocation density of approximately 1×108 cm−2 was confirmed. [Copyright &y& Elsevier]