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Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2 + technique

Authors :
Gui, D.
Mo, Z.Q.
Xing, Z.X.
Huang, Y.H.
Hua, Y.N.
Zhao, S.P.
Cha, L.Z.
Source :
Applied Surface Science. Dec2008, Vol. 255 Issue 4, p1437-1439. 3p.
Publication Year :
2008

Abstract

Abstract: Ultra-thin silicon oxynitride (SiO x N y ) is the leading candidate to replace pure silicon oxide (SiO2) before high k dielectrics come into place because oxynitrides demonstrate several properties superior to those of the conventional gate oxides. The performance of the transistor was reported to depend on the N dose and its distribution in the gate oxide. Therefore, accurate characterization of SiO x N y is prerequisite to control the quality of the ultra-thin nitrided gate oxide. However, secondary ion mass spectrometry (SIMS) faces big challenges in analyzing ultra-thin gate oxide because of surface effect and matrix effect. In this work, MCs2 + (M stands for matrix element) was detected to reduce the matrix effect in depth profiling the ultra-thin oxynitride. However, N profile was very close to the top surface if the oxynitirde was fabricated by decoupled plasma nitridation (DPN). With the conventional approach, the N dose was overestimated and the N profile was distorted near the top surface. To obtain a reliable N profile, the oxynitride was capped with a thin layer of oxide. The N profile of interest was hence in the region of sputtering equilibrium, i.e. the surface effect was minimized. As the results, reliable N dose and profile have been obtained. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
01694332
Volume :
255
Issue :
4
Database :
Academic Search Index
Journal :
Applied Surface Science
Publication Type :
Academic Journal
Accession number :
35501075
Full Text :
https://doi.org/10.1016/j.apsusc.2008.06.047